| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which a MIN-type capacitive element is formed with the smaller number of processes and which has a resistor with less dispersion of a resistance value or parasitic resistance, and to provide a manufacturing method of the device. <P>SOLUTION: The semiconductor device is provided with wirings 10b and 10c formed of a barrier metal film 6, an AlCu film 8, and a TiN film 9 which are sequentially laminated on an insulating film 2 formed on a substrate from a lower side; and a capacitive element 10a composed of a capacitance lower electrode formed of the barrier metal film 6, a SiO<SB>2</SB>film 7 as a capacitance insulating film formed on the capacitance lower electrode, and a capacitance upper electrode composed of an AlCu film 8 and a TiN film 9 formed on the SiO<SB>2</SB>film 7. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
