发明名称 Semiconductor integrated circuit, semiconductor non-volatile memory, memory card, and microcomputer
摘要 There are included a high voltage output driver (1) which derives operational power from high voltages and a switching circuit (2) which reverses the output state of the high voltage output driver. The high voltage output driver includes on a current path of the high voltages a series circuit of a first MOS transistor (M1) and second MOS transistor (M2), with the serial connection node thereof being the driver output terminal. The switching circuit operates to reverse the complementary switching states of the first and second MOS transistors such that one transistor in the on-state is turned to the off-state first and another transistor is turned to the on-state afterward. Even if the other MOS transistor has its Vds exceeding the minimum breakdown voltage when it operates to turn on, the through current path is already cut off, and therefore the high voltage output driver does not break down.
申请公布号 US2004212014(A1) 申请公布日期 2004.10.28
申请号 US20040486638 申请日期 2004.02.12
申请人 FUJITO MASAMICHI;NAKAMURA YUKO;SUZUKAWA KAZUFUMI;TANAKA TOSHIHIRO;SHINAGAWA YUTAKA 发明人 FUJITO MASAMICHI;NAKAMURA YUKO;SUZUKAWA KAZUFUMI;TANAKA TOSHIHIRO;SHINAGAWA YUTAKA
分类号 G11C11/407;G06F15/78;G06K19/07;G11C7/10;G11C7/12;G11C8/08;G11C16/06;G11C16/08;(IPC1-7):H01L23/62 主分类号 G11C11/407
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