Memory pumping circuit,申请号US20030696525-传众专利搜索

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法人/股东/高管

发明名称	Memory pumping circuit
摘要	A memory pumping circuit is proposed. The feature of the present invention is the charging capacitor of the pumping circuit is a DRAM cell for enhancing the capacitance.
申请公布号	US2004213034(A1)	申请公布日期	2004.10.28
申请号	US20030696525	申请日期	2003.10.29
申请人	CHEN CHIENG-CHUNG	发明人	CHEN CHIENG-CHUNG
分类号	G11C5/14;G11C11/408;(IPC1-7):G11C11/24	主分类号	G11C5/14
代理机构		代理人
主权项
地址

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