| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which the reliability of an embedded copper wiring can be improved. SOLUTION: An opening 16 is formed as a wiring groove in insulation films 14 and 15, and a conductive barrier film 17 is formed on the insulation film 15 including the bottom and the side wall of the opening 16. Then a copper seed film 18 is formed on the conductive barrier film 17 and it is heated. Furthermore, a copper seed film 19 is formed on the copper seed film 18 and it is heated. Then a copper main conductor film 20 is formed on the copper seed film 19 as to fill the opening 16, and the CMP method is used to polish the main conductor film 20, the copper seed film 19, the copper seed film 18, and the conductive barrier film 17 until the insulation film 15 is exposed. Thus, a wiring 21 is formed as an embedded copper wiring in the opening 16. COPYRIGHT: (C)2005,JPO&NCIPI
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