MAGNETIC DEVICE WITH MAGNETIC TUNNEL JUNCTION, MEMORY ARRAY AND READ/WRITE METHODS USING SAME

摘要

The magnetic random access memory (MRAM) comprises a storage layer (20a) which is heated beyond the magnetization blocking temperature. A further circuit element (26) is provided for applying a magnetic field to the storage layer. to orientate (34) the magnetization of this layer. The magnetic storage device comprises a reference layer (20c) and a storage layer (20a) separated by a semiconductor or insulating layer (20b). The magnetization blocking temperature of the storage layer is lower than that of the reference layer. A circuit (22,24) is provided for heating the storage layer beyond the magnetization blocking temperature. At the same time a further circuit element (26) is provided for applying a magnetic field to the storage layer. This has the effect of orientating (34) the magnetization of this layer relative to that of the reference layer, without modifying the orientation of the field of the reference layer.