发明名称 SEMICONDUCTOR DEVICE WITH IMPROVED BONDING STRENGTH BETWEEN FIRST ELECTRODE AND CONDUCTIVE WIRE AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve the bonding strength between a first electrode pad and a ball portion of a conductive wire by adding Pd to the conductive wire. CONSTITUTION: A plurality of first electrode pads(13) mainly made of Al are formed on a semiconductor chip. A plurality of second electrode pads are formed on a circuit board. A conductive wire mainly made of Au is used for connecting stably the first electrode pad of the semiconductor chip with the second electrode pad of the circuit board. The conductive wire is composed of a ball portion(15a) connected with the first electrode pad, an adhesive portion connected with the second electrode and a wire portion(15c) between the ball portion and the adhesive portion. A small amount of Pd is contained in the conductive wire. The distance between centers of the first electrode pads is in a range of 65 μm or less.
申请公布号 KR20040086576(A) 申请公布日期 2004.10.11
申请号 KR20040020815 申请日期 2004.03.26
申请人 RENESAS TECHNOLOGY CORP. 发明人 KAWANABE NAOKI;MATSUZAWA TOMOO;MORITA TOSHIAKI;NISHIDA TAKAFUMI
分类号 H01L21/60;H01L21/56;H01L21/603;H01L23/31;H01L23/49 主分类号 H01L21/60
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