| 摘要 |
PROBLEM TO BE SOLVED: To reduce the leakage current by inhibiting the the junction leakage. SOLUTION: A semiconductor device comprises a semiconductor region 103 wherein impurities of one conductivity are incorporated, a gate insulating film 105 formed on the semiconductor region 103, a gate electrode 106 formed on the gate insulating film 105, a low concentration layer 109a formed in a region extending from a principal plane to a first depth of the semiconductor region 103 by injecting first impurities of the opposite conductivity into the semiconductor region 103 by a first dose rate, and a high concentration layer 109b formed in a region extending from the principal plane to a second depth which is shallower than the first depth of the semiconductor region 103 by injecting second impurities of the opposite conductivity into the semiconductor region 103 by a second dosing rate equal to or more than the first dosing rate and not more than 1×10E15/cm<SP>2</SP>. COPYRIGHT: (C)2005,JPO&NCIPI
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