| 摘要 |
The present invention is generally directed to various methods of controlling copper barrier/seed deposition processes, and a system for accomplishing same. In one illustrative embodiment, the method comprises performing at least one process operation to form a barrier metal layer and a copper seed layer above a wafer, sensing at least one parameter of at least one process operation and determining an acceptability metric for the barrier metal layer and the copper seed layer based upon the sensed at least one parameter. In some embodiments, the method further comprises modifying at least one parameter of said at least one process operation to be performed to form a barrier metal layer and a copper seed layer on a subsequently processed wafer based upon said determined acceptability metric. In some embodiments, the method further comprises identifying a wafer as unacceptable if said acceptability metric falls below a preselected level. In some embodiments, the acceptability metric may be determined by accessing a model that correlates the sensed parameter(s) to an acceptability metric for the barrier metal layer and the copper seed layer. In one embodiment, the system is comprised of a process tool that is adapted to perform at least one process operation, e.g., an etch process, a degas process, a barrier metal deposition process and/or a copper seed deposition process, to form a barrier metal layer and a copper seed layer. The system further comprises a controller that is adapted to access a model to determine an acceptability metric for the barrier metal layer and copper seed layer based upon at least one sensed process parameter for at least one of the process operations performed in forming the barrier metal layer and copper seed layer.
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