| 摘要 |
PURPOSE: A nonvolatile ferroelectric memory device having a timing reference control function and its control method are provided to improve a data access time by improving a structure of a bus to read and write data and by storing data read and written by a register. CONSTITUTION: A plurality of cell array blocks(500) comprise a nonvolatile ferroelectric memory respectively, and amplify a sensing voltage of cell data in a reference timing strobe period by referring to a time axis. A read/write data register array part(300) stores read data applied from the plurality of cell array blocks while a read lock control signal is enabled, and it stores the read data or input data written to the plurality of cell array blocks while a write lock control signal is enabled. A read data bus part(400) is connected to the plurality of cell array blocks in common, and outputs the read data to the read/write data register array part. And a write data bus part(600) is connected to the plurality of cell array blocks in common and outputs the read data or the input data to the plurality of cell array blocks.
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