发明名称 |
Puddle etching method of thin film by using spin-processor |
摘要 |
The present invention discloses a puddle etching method of thin film. In a spin etching equipment, pre-wet the wafer by D.I. water and etch solution to remove the contamination and the upper layer of the film on the wafer. Then spin slowly (about 0-50 rpm) and inject etching solution to form a puddle of etching solution which will stay on the wafer, the wafer then keep spin slowly (about 0-50 rpm) such that the puddle of etching solution stay on the wafer and etching is going on by puddle etching. After the thin film is etched, the wafer is spin at higher speed, and D.I. water is injected to rinse. Then, IPA is used to remove the D.I. water by Marangoni effect. Finally raise the speed to dry the wafer.
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申请公布号 |
US6793836(B2) |
申请公布日期 |
2004.09.21 |
申请号 |
US20020190456 |
申请日期 |
2002.07.05 |
申请人 |
GRAND PLASTIC TECHNOLOGY CORPORATION |
发明人 |
TSUNG-KUEI KANG;HO HSIEH YUE;WANG CHIH-CHENG;SHIH-YI HSIAO |
分类号 |
C23F1/08;H01L21/00;H01L21/311;(IPC1-7):B44C1/22;B08B3/00 |
主分类号 |
C23F1/08 |
代理机构 |
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