| 摘要 |
Methods and apparatus are provided for annealing of materials deposited in a processing chamber to form silicide layers. In one aspect, a method is provided for treating a substrate surface including positioning a substrate having silicon material disposed thereon on a substrate support in a chamber, forming a metal layer on at least the silicon material, and annealing the substrate in situ to form a metal silicide layer. In another aspect, the method is performed in an apparatus including a load lock chamber, an intermediate substrate transfer region connected to the load lock chamber, the intermediate substrate transfer region comprising a first substrate transfer chamber and a second substrate transfer chamber, a physical vapor deposition processing chamber disposed on the first substrate transfer chamber and an annealing chamber disposed on the second substrate transfer chamber. |
