METHOD OF PLASMA OXIDATION AND SEMICONDUCTOR SUBSTRATE

摘要

A method of plasma oxidation for oxidizing a substrate with plasma, wherein the type of inert gas to be introduced in treatment vessel for use in plasma formation is selected so that the emission wavelength of plasma falls within a desirable range, for example, 500 to 600 Å. This method enables forming a thin oxide film of high quality without detriment to the insulation of oxide film functioning as an insulating film.