| 摘要 |
A method of making a nonvolatile hybrid memory cell is provided. The cell is formed from of a magnetic spin storage element and one or two semiconductor FET isolation elements. The magnetic spin storage element is an electron spin-based memory element situated on a silicon based substrate and includes a first ferromagnetic layer with a changeable magnetization state, a second ferromagnetic layer with a non-changeable magnetization state, and a base layer situated between said first ferromagnetic layer and said second ferromagnetic layer. The base layer is a material having electron levels that are not significantly affected by an electron spin, and can include aluminum.
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