发明名称 SEMICONDUCTOR DEVICE HAVING IMPROVED HUMIDITY RESISTANCE AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device of a hermetical seal type which effectively prevents moisture invasion and has an excellent moisture resistance, and to provide a method of manufacturing the semiconductor device. SOLUTION: The semiconductor device is mounted to be hermetically sealed in a semiconductor package obtained by molding a moisture resistive layer of a vapor impermeable material having a resin layer at least one surface of which is previously laminated on the bottom of a box-shaped hollow resin molding. In the method of manufacturing the semiconductor device, the vapor impermeable material for moisture resistive formation having the resin layer at least one surface of which is laminated as well as a lead frame are previously inserted in the die of the box-shaped hollow molding, and then package molding resin is injection or transfer molded. The semiconductor is mounted in the package obtained by the moisture resistive layer of the vapor impermeable material is inserted in the box-shaped hollow resin molding at its bottom and then molded, with the lead frame located at a predetermined location. Subsequently, the hollow opening of the package is hermetically sealed with a lid member. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004235514(A) 申请公布日期 2004.08.19
申请号 JP20030023574 申请日期 2003.01.31
申请人 MITSUI CHEMICALS INC 发明人 URAKAWA TOSHIYA;KOBAYASHI MASANAO;KONDO MASAYUKI;SUZUKI YOHEI
分类号 H01L23/08;(IPC1-7):H01L23/08 主分类号 H01L23/08
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