METHOD FOR DRIVING TRANSISTOR AND METHOD FOR DRIVING SHIFT REGISTER AND SHIFT REGISTER TO PERFORM THE SAME

摘要

PURPOSE: A method for driving a transistor is provided to prevent the deterioration of a current driving capability due to a gate bias stress applied to a gate of an amorphous silicon thin film transistor. CONSTITUTION: According to the method for driving a transistor having a drain and a source and a gate, the first power supply voltage is applied to the drain, and the second power supply voltage is applied to the source. The third power supply voltage swing with a constant period is applied to the gate so that a threshold voltage increased according to the deterioration of the transistor is decreased below a threshold voltage at which the transistor occurs an error. An amplitude of a voltage between the gate and the source of the transistor where the third power supply voltage is applied is at least more than two times than a normal threshold voltage of the transistor.