| 摘要 |
PROBLEM TO BE SOLVED: To improve the transmittance of an incident light without requiring any special process, and to form on a photodiode of a CMOS (complementary metal oxide semiconductor) image sensor an antireflection film for suppressing the transmissions of near-infrared rays. SOLUTION: In a manufacturing method of a CMOS image sensor, an oxide film 2, a nitride film 3, an oxide film 4, and a nitride film 5 are so laminated as to constitute an antireflection film on the surface of a photodiode 1. By subjecting the oxide film 2 and the nitride film 3 to an anisotropic etching, side walls 22, 23 are formed on both the sides of a gate electrode 8 constituting an n-type MOS transistor 16. COPYRIGHT: (C)2004,JPO&NCIPI
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