SOLUTION FOR REMOVAL OF POST DRY ETCHING RESIDUES

摘要

A cleaning solution for removing post dry etching residues, the cleaning solution comprising sulfuric acid, hydrogen peroxide, a fluorine-containing compound and a surfactant. The percentage of sulfuric acid is from 1 wt% to 30wt%, the concentration of the fluorine-containing compound ranges from 1 ppm to 10000 ppm, the percentage of hydrogen peroxide is from 0.lwt% to 15wt%, and the concentration of the surfactant ranges from 1 ppm to 10000 ppm.