发明名称 |
Nonvolatile semiconductor memory device |
摘要 |
Characteristics of a nonvolatile semiconductor memory device are improved. The memory cell comprises: an ONO film constituted by a silicon nitride film SIN for accumulating charge and by oxide films BOTOX and TOPOX disposed thereon and thereunder; a memory gate electrode MG disposed at an upper portion thereof; a select gate electrode SG disposed at a side portion thereof through the ONO film; a gate oxide film SGOX disposed thereunder. By applying a potential to a select gate electrode SG of a memory cell having a source region MS and a drain region MD and to the source region MS and by accelerating electrons flowing in a channel through a high electric field produced between a channel end of the select transistor and an end of an n-type doped region ME disposed under the memory gate electrode MG, hot holes are generated by impact ionization, and the hot holes are injected into a silicon nitride film SIN by a negative potential applied to the memory gate electrode MG, and thereby an erase operation is performed.
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申请公布号 |
US2004155234(A1) |
申请公布日期 |
2004.08.12 |
申请号 |
US20030743783 |
申请日期 |
2003.12.24 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
ISHIMARU TETSUYA;MATSUZAKI NOZOMU;KUME HITOSHI |
分类号 |
G11C11/34;G11C16/02;G11C16/04;G11C16/10;G11C16/14;H01L21/8246;H01L21/8247;H01L27/115;H01L29/51;H01L29/788;H01L29/792;(IPC1-7):G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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