发明名称 Dual band power amplifier with improved isolation
摘要 The invention is a dual band power amplifier with a small footprint having excellent band-to-band isolation. An improved second and fourth harmonic trap at the output of the low band power amplifier comprises a first capacitance shunted to ground placed in series with an inductance, the inductance preferably in the form of a transmission line of predetermined length, and a second capacitance coupled between an intermediate point of the transmission line inductance and ground. Band-to-band isolation can be additively increased by further forming a ground loop between the outputs of the two power amplifiers. The ground loop further isolates the high band amplifier from the low band amplifier by causing the magnetic fields generated around the output wire bonds of the low band power amplifier to set up circulating currents primarily in the ground loop, rather than coupling into the output wire bonds of the high band power amplifier.
申请公布号 US2004155706(A1) 申请公布日期 2004.08.12
申请号 US20030366062 申请日期 2003.02.12
申请人 WINSLOW THOMAS A.;ZHAO XINJIAN 发明人 WINSLOW THOMAS A.;ZHAO XINJIAN
分类号 H03F3/60;(IPC1-7):H03F3/68 主分类号 H03F3/60
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