发明名称 Semiconductor device and method for manufacturing the same
摘要 A semiconductor device and method of manufacturing the semiconductor device including a semiconductor substrate of a first conductivity type. A scribe lane area formed in the substrate to define chip formation areas. A deep well area formed in each chip formation area. The deep well area has a second conductivity type which is opposite the first conductivity type. Also, at least one well area is formed within the deep well area.
申请公布号 US6773976(B2) 申请公布日期 2004.08.10
申请号 US20010820217 申请日期 2001.03.29
申请人 HYUNDAI ELETRONICS INDUSTRIES CO., LTD. 发明人 KIM HA ZOONG
分类号 H01L21/04;(IPC1-7):H01L21/823 主分类号 H01L21/04
代理机构 代理人
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