发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device along with its manufacturing method where various elements are integrated without any semiconductor substrate. SOLUTION: A layer which is to be peeled and contains an inductor, a capacitor, a resistive element, a TFT element, an embedded wiring, and the like is formed on a substrate without any semiconductor substrate. The layer to be peeled is peeled from the substrate and transferred to a circuit board 100 which is made conductive to a wiring pattern 114 provided on the circuit board 100 using a wire 112 and solder 107, to manufacture a high frequency module or the like. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004221570(A) 申请公布日期 2004.08.05
申请号 JP20030431911 申请日期 2003.12.26
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;TAKAYAMA TORU;MARUYAMA JUNYA;ONO YUMIKO;GOTOU YUUGO;KUWABARA HIDEAKI
分类号 H01L23/12;H01L21/02;H01L21/20;H01L21/322;H01L21/336;H01L21/8234;H01L27/00;H01L27/06;H01L27/08;H01L27/12;H01L29/786;(IPC1-7):H01L27/12;H01L21/823 主分类号 H01L23/12
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