| 摘要 |
PROBLEM TO BE SOLVED: To prevent the generation of unevenness in the film thickness of a thin film deposited on each substrate. SOLUTION: As to the hot wire CVD (Chemical Vapor Deposition) system, planar catalyst bodies 44 are erected inside a reaction chamber 40, a gas blow-off body 43 feeding gas to the catalyst bodies 44 is provided, and both the sides of the gas blow-off body 43 are made into recessed parts respectively each with the shape of a quadrangular pyramid, so that the concentration distribution in the vicinities of the catalyst bodies 44 is controlled to intentionally make a state where the gas concentration is made different so that a reverse tendency is shown between the central part of each substrate large in film deposition and both the end parts of the substrate relatively reduced in film deposition in the uniform gas concentration. Thus, the concentration of reactive species in the vicinities of the substrates is made uniform. In this way, a uniform film thickness distribution can be obtained even in the simple catalyst structure. COPYRIGHT: (C)2004,JPO&NCIPI
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