| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device which is capable of 2 bits operation and is easy for miniaturizing. SOLUTION: The semiconductor storage device is provided with memory functional bodies 261 and 262 having a function holding charges at both sides of a single gate electrode 217 formed on a semiconductor layer 211 via an insulating film 214. Each memory functional body includes a charge holding film 242 having a charge storage region 250. The charge storage region 250 is disposed straddling a part of a channel region 273 and a part of diffusion regions 212 and 213 arranged at both sides of the channel region. The memory functional bodies are capable of the 2 bits operation because they are formed at the both sides of the gate electrode independent of the gate insulating film. Further, as each memory functional body is separated by the gate electrode, an interference at rewriting is effectively controlled and a short channel effect is controlled by thinning the gate insulating film. The miniaturization of a memory element becomes easy therefore. COPYRIGHT: (C)2004,JPO&NCIPI
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