| 摘要 |
Disclosed is a method for the production of a semiconductor element comprisi ng at least one first vertical power component (5, 9) and at least one lateral, active component (6) and/or at least one second vertical power component (10 ), between which at least one trench (2) filled with at least one type of insulation (4) is disposed. The invention also relates to a semiconductor component produced according to said method. The semiconductor component is essentially characterized by an eccentric or concentric arrangement of the respective functional elements (5, 6, 9, 10) which are respectively separate d from each other by trench insulation. In order to produce one such semiconductor element, at least one trench is etched into the front side of a silicon substrate (1). Said trench fully encompasses at least one partial surface of the front side and is subsequently filled with insulation (4). In a further stage of said method, the silicon substrate (1) is extensively thinn ed from the rear side to the insulation (4), i.e. up to the lower side of the insulation. The power components (5, 9, 10) are contacted from the rear side .
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