发明名称 |
Well regions of semiconductor devices |
摘要 |
An integrated circuit device having a body bias voltage mechanism. The integrated circuit comprises a resistive structure disposed therein for selectively coupling either an external body bias voltage or a power supply voltage to biasing wells. A first pad for coupling with a first externally disposed pin can optionally be provided. The first pad is for receiving an externally applied body bias voltage. Circuitry for producing a body bias voltage can be coupled to the first pad for coupling a body bias voltage to a plurality of biasing wells disposed on the integrated circuit device. If an externally applied body bias voltage is not provided, the resistive structure automatically couples a power supply voltage to the biasing wells. The power supply voltage may be obtained internally to the integrated circuit. |
申请公布号 |
AU2003300399(A8) |
申请公布日期 |
2004.07.29 |
申请号 |
AU20030300399 |
申请日期 |
2003.12.29 |
申请人 |
TRANSMETA CORPORATION |
发明人 |
JAMES B. BURR;MIKE PELHAM |
分类号 |
H01L21/8234;H01L21/8238;H01L27/02;H01L27/092 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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