发明名称 METHOD FOR FORMING METAL FILM
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a metal film at low temperature by application on a substrate with low heat resistance. SOLUTION: In this method for forming the metal film includes a step for heating and ultraviolet irradiation after forming the film of application agent containing metal particles on the base body. Preferably, heating and ultraviolet radiation are performed at once. Preferably, the average particle size of the metal particles is 50 nm or less, the ultraviolet irradiation is done at 380 nm or less, and the temperature for heating is 200°C or lower. The metal particle is, for example, at least one kind of metal selected from a group of platinum, gold, silver, palladium, iridium. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004207143(A) 申请公布日期 2004.07.22
申请号 JP20020377303 申请日期 2002.12.26
申请人 KRI INC 发明人 FUKUI TOSHIMI
分类号 C09D1/00;C09D5/00;C09D5/24;C23C26/00;H01B13/00;(IPC1-7):H01B13/00 主分类号 C09D1/00
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