发明名称 SPIN INJECTION DEVICE AND MAGNETIC DEVICE USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a spin injection device, a spin injection magnetic device, and a spin injection magnetic memory device capable of reversing the magnetization of spin injection at a small current density. SOLUTION: This spin injection device 14 includes a spin injection part 1 comprising a spin polarization part 9 containing a ferromagnetic fixed layer 26 and an injection junction part 7 of a non-magnetic layer and a ferromagnetic free layer 27 provided in contact with the spin injection part 1. The non-magnetic layer 7 consists of an insulator 12 or a conductor 25, and the surface of the ferromagnetic free layer 27 is provided with the non-magnetic layer 28. An electric current is passed in the vertical direction of the film surface of the spin injection device 14, so as to reverse the magnetization of the ferromagnetic free layer 27. This device can be utilized for various magnetic devices and magnetic memory devices including a super-gigabit large-capacitance/high-speed/non-volatile MRAM. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004207707(A) 申请公布日期 2004.07.22
申请号 JP20030410966 申请日期 2003.12.09
申请人 JAPAN SCIENCE & TECHNOLOGY AGENCY 发明人 INOMATA KOICHIRO;TETSUKA NOBUNORI
分类号 C22C19/07;G11C11/15;H01F10/32;H01L21/8246;H01L27/105;H01L29/82;H01L43/08;(IPC1-7):H01L29/82 主分类号 C22C19/07
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