发明名称 FIELD EMISSION DEVICE AND ITS MANUFACTURING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an FEA which can realize uniform electron emission from an emitter and high-quality images and its manufacturing method. <P>SOLUTION: The present invention provides a device comprising a gate insulative layer formed on a cathode electrode, a gate electrode having a gate hole corresponding to a though hole of the gate insulative layer and an emitter formed on the gate electrode, wherein the emitter has a laminate structure consisting of a resistance substance layer comprising a resistance substance and an electron emission substance layer comprising a fine electron emission source formed on the resistance substance layer, and its manufacturing method. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p>
申请公布号 JP2004207239(A) 申请公布日期 2004.07.22
申请号 JP20030423929 申请日期 2003.12.22
申请人 SAMSUNG SDI CO LTD 发明人 RI SHOKI;LEE HANG-WOO;PARK SHANG-HYEUN;KIM YOU-JONG
分类号 H01J1/304;H01J9/02;(IPC1-7):H01J1/304 主分类号 H01J1/304
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