METHODS OF FORMING SEMICONDUCTOR DEVICES INCLUDING MESA STRUCTURES AND MULTIPLE PASSIVATION LAYERS AND RELATED DEVICES
摘要
A method of forming a semiconductor device may include forming a semiconductor structure on a substrate wherein the semiconductor structure defines a mesa having a mesa surface opposite the substrate and mesa sidewalls between the mesa surface and the substrate. A first passivation layer can be formed on at least portions of the mesa sidewalls and on the substrate adjacent the mesa sidewalls wherein at least a portion of the mesa surface is free of the first passivation layer and wherein the first passivation layer comprises a first material. A second passivation layer can be formed on the first passivation layer wherein at least a portion of the mesa surface is free of the second passivation layer, and wherein the second passivation layer comprises a second material different than the first material. Related devices are also discussed.
申请公布号
WO2004059808(A2)
申请公布日期
2004.07.15
申请号
WO2003US40682
申请日期
2003.12.18
申请人
CREE, INC.;HABERERN, KEVIN, W.;ROSADO, RAYMOND;BERGMANN, MICHAEL, J.;EMERSON, DAVID, T.
发明人
HABERERN, KEVIN, W.;ROSADO, RAYMOND;BERGMANN, MICHAEL, J.;EMERSON, DAVID, T.