发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device capable of enhancing reflow resistance properties, and to provide a manufacturing method thereof. SOLUTION: There are provided a semiconductor chip 2, a tub mounted on the semiconductor chip 2, a plurality of inner leads disposed surrounding the semiconductor chip 2, a wire for connecting a bonding pad 2a of the semiconductor chip 2 with the inner leads, a sealer for sealing the semiconductor chip 2, a plurality of the wires and the plurality of inner leads with a resin, and a plurality of outer leads, which are integrally linked with each of the inner leads and project externally of the sealer. A recess 2e is formed at an end of a passivation film 2d of the semiconductor chip 2, and the recess 2e is brought into contact with the sealer, whereby the adhesive properties of the sealer to the end of the passivation film 2d can be enhanced, and the occurrence of a separation at an interface between the passivation film 2d and a sealing resin at the end of a main surface of the chip can be prevented, thereby enhancing the reflow resistance properties of the semiconductor device. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004200532(A) 申请公布日期 2004.07.15
申请号 JP20020369215 申请日期 2002.12.20
申请人 RENESAS TECHNOLOGY CORP;RENASAS NORTHERN JAPAN SEMICONDUCTOR INC 发明人 AMANO KENJI;FUJISAWA ATSUSHI
分类号 H01L23/29;H01L23/31;(IPC1-7):H01L23/29 主分类号 H01L23/29
代理机构 代理人
主权项
地址