| 摘要 |
PROBLEM TO BE SOLVED: To provide corrosion-proofing technology for a metal interconnect line formed by chemical mechanical polishing (CMP) method. SOLUTION: The method comprises a process that forms a metal layer containing copper as a main component on primary major face of a wafer having a primary insulating film in which concave groove pattern is formed, a process that eliminates the metal layer on the front surface of the primary insulating film and outside of the concave groove by the CMP, a process that transports the wafer from which the metal layer is removed to a post-cleaning section being made a shielding structure, a process that post-cleans the primary major face of the wafer with alkaline or alkalescent chemicals by scrub or brush cleaning in the post-cleaning section, and a process that carries out spin drying for the primary major face of the wafer to which the post-cleaning is performed. COPYRIGHT: (C)2004,JPO&NCIPI
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