| 发明名称 |
Method for post-chemical mechanical polishing cleaning |
| 摘要 |
A method for cleaning residue of alignment marks on a CMP polished wafer. The method includes application of a strong acid or oxygen plasma to the wafer to remove the residue.
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| 申请公布号 |
US2004132384(A1) |
申请公布日期 |
2004.07.08 |
| 申请号 |
US20030336718 |
申请日期 |
2003.01.06 |
| 申请人 |
CHEN CHIH-JUNG |
发明人 |
CHEN CHIH-JUNG |
| 分类号 |
B08B3/08;B08B7/00;B24B37/04;H01L21/02;H01L21/3105;H01L21/321;(IPC1-7):B24B1/00;B24B7/19;B24B7/30 |
主分类号 |
B08B3/08 |
| 代理机构 |
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代理人 |
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