发明名称 |
Method of etching high-K dielectric materials |
摘要 |
A method of etching a dielectric layer having a dielectric constant that is greater than 4.0 on a semiconductor substrate using a pulsed substrate biasing technique (PSBT) that applies a plurality of processing cycles to the substrate, where each cycle comprises a period of plasma etching without substrate bias and a period of plasma etching with the substrate bias.
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申请公布号 |
US2004132311(A1) |
申请公布日期 |
2004.07.08 |
申请号 |
US20030338250 |
申请日期 |
2003.01.06 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
NALLAN PADMAPANI C.;JIN GUANGXIANG;KUMAR AJAY |
分类号 |
H01L21/28;H01L21/311;H01L29/51;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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