| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to prevent collapse of patterns by forming a photoresist layer in a cylindrical storage node. CONSTITUTION: An ILD(InterLayer Dielectric)(31) is formed on a substrate having a cell transistor. A nitride layer(32) as a stopper, an isolating layer, a hard mask layer are sequentially stacked on the ILD. By selectively patterning the stacked structure, capacitor holes are formed to expose a storage node plug of the cell transistor. An amorphous polysilicon layer is formed on the capacitor holes. A photoresist layer(36) is coated to entirely fill the capacitor holes. By etch-back of the amorphous polysilicon layer, a storage node(35a) is formed. The photoresist layer is then removed.
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