| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve reliability by using a silicon germanium dot layer as a floating gate. CONSTITUTION: A silicon germanium layer with high surface roughness is formed on a silicon substrate(100). Dopants are implanted using the interface between the silicon substrate and the SiGe(Silicon Germanium) layer as a stop layer. By annealing the SiGe layer, a SiGe dot layer(112) is formed and a tunneling oxide layer(110) is simultaneously formed. Then, a control oxide layer(120) and a control gate(122) are sequentially formed on the tunneling oxide layer.
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