发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE CAPABLE OF REDUCING CONTACT RESISTANCE |
摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of minimizing the contact resistance by enhancing the contact area. CONSTITUTION: A first insulating layer(46) is formed on a semiconductor substrate(40) with conductive patterns(43). A plug(49) is formed to contact the substrate through the first insulating layer, wherein the upper part of the plug is protrudent. A second insulating layer(50) is formed on the resultant structure. An opening part is formed to expose the protrudent plug by selectively etching the second insulating layer. A contact pad(53) is formed to contact the protrudent plug.
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申请公布号 |
KR20040057509(A) |
申请公布日期 |
2004.07.02 |
申请号 |
KR20020084266 |
申请日期 |
2002.12.26 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE, MIN SEOK;LEE, SEONG GWON |
分类号 |
H01L21/8242;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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