发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE CAPABLE OF REDUCING CONTACT RESISTANCE
摘要 PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of minimizing the contact resistance by enhancing the contact area. CONSTITUTION: A first insulating layer(46) is formed on a semiconductor substrate(40) with conductive patterns(43). A plug(49) is formed to contact the substrate through the first insulating layer, wherein the upper part of the plug is protrudent. A second insulating layer(50) is formed on the resultant structure. An opening part is formed to expose the protrudent plug by selectively etching the second insulating layer. A contact pad(53) is formed to contact the protrudent plug.
申请公布号 KR20040057509(A) 申请公布日期 2004.07.02
申请号 KR20020084266 申请日期 2002.12.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, MIN SEOK;LEE, SEONG GWON
分类号 H01L21/8242;(IPC1-7):H01L21/824 主分类号 H01L21/8242
代理机构 代理人
主权项
地址