| 摘要 |
Briefly, in accordance with an embodiment of the invention, a memory (100) is provided. The memory (100) may include a memory element (130) and a first access device (120) coupled to the memory element (130), wherein the first access device (120) comprises a first chalcogenide material (940). The memory (100) may further include a second access device (125) coupled to the first access device(120), wherein the second access device (125) comprises a second chalcogenide material (920). |
