| 摘要 |
PURPOSE: A method for manufacturing a flash memory cell is provided to be capable of improving the operation properties of the memory cell and easily carrying out an ion implantation and cell manufacturing process using a damascene process. CONSTITUTION: An insulating layer is formed on a semiconductor substrate(401). A gate forming region of the semiconductor substrate is exposed by selectively etching the insulating layer. Predetermined ions for restraining oxidation are implanted into the edge portions of the gate forming region. An oxidation is carried out on the resultant structure for forming a tunnel oxide layer(405) on the gate forming region. The center portion of the tunnel oxide layer is thicker than the edge portion of that due to the influence of the predetermined ions. A floating gate(406), a dielectric layer(407), a control gate(408), a silicide layer(409), and a hard mask(410) are sequentially formed on the tunnel oxide layer. A spacer(412) is formed at both sidewalls of the gate structure by etching the insulating layer. A source/drain(413a,413b) are formed at both sides of the gate structure in the semiconductor substrate.
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