发明名称 METHOD FOR FORMING PATTERN BY USING ULTRAHIGH HEAT-RESISTANT POSITIVE PHOTOSENSITIVE COMPOSITION
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for forming an ultrahigh heat-resistant positive pattern by using a positive photosensitive composition in the process which requires high heat resistance of a photoresist pattern such as manufacturing of a TFT active matrix substrate. <P>SOLUTION: After a photosensitive composition containing (a) an alkali-soluble resin, (b) a photosensitive agent having a quinone diazide group, (c) a photoacid generating agent, (d) a crosslinking agent, and (e) a solvent is applied on a substrate, exposed through a mask, and developed to remove the exposed part to form a positive image, the obtained positive image is entirely exposed and if necessary, post-baked. When a 1, 2-naphthoquinone diazide-4-sulfonyl compound is used as the photosensitive agent having a quinone diazide group, this compound also functions as an acid generating agent and thereby, the component (c) can be omitted. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004177683(A) 申请公布日期 2004.06.24
申请号 JP20020344146 申请日期 2002.11.27
申请人 CLARIANT (JAPAN) KK 发明人 IGAWA AKIHIKO;YAMAMOTO ATSUKO
分类号 G03F7/004;G03F1/00;G03F1/68;G03F7/022;G03F7/20;G03F7/40;H01L21/027 主分类号 G03F7/004
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