EXPOSURE MASK, METHOD FOR MEASURING FOCUS, ADMINISTRATING METHOD OF ALIGNER, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE

摘要

PROBLEM TO BE SOLVED: To easily measure the defocus quantity of an aligner with high accuracy.

SOLUTION: In the exposure mask having a mask pattern to be transferred onto a substrate by means of the projection optical system of the aligner, the mask pattern includes a pattern group consisting of a main pattern and an assist pattern. The main pattern is made of a single slit pattern while the assist pattern is made of a single slit or a plurality of slits arranged only one side of the main pattern. The transfer position of the projected image of the pattern group on the substrate varies depending on the defocus quantity of the aligner.

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