发明名称 Semiconductor device and manufacturing method thereof
摘要 A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high.By performing the formation of the pixel electrode 127, the source region 123 and the drain region 124 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized.
申请公布号 US6747288(B2) 申请公布日期 2004.06.08
申请号 US20020144067 申请日期 2002.05.14
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;KUWABARA HIDEAKI;ARAI YASUYUKI
分类号 G02F1/136;G02F1/1368;G09F9/30;H01L21/00;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L29/04 主分类号 G02F1/136
代理机构 代理人
主权项
地址