发明名称 |
Read only data bus and write only data bus forming in different layer metals |
摘要 |
A semiconductor memory device that enables data buses to operate at high speed by reducing wiring capacitance and interference noise between data bus lines is provided. A semiconductor memory device includes a read-only data bus which is formed in a first metal layer and has plural pairs of read lines precharged to an arbitrary voltage and two lines in a pair transmitting complementary read signals. A write-only data bus, which is positioned in parallel with the read-only data bus, is formed in a second metal layer different from the first metal layer and has plural pairs of write lines precharged to an arbitrary voltage, and two lines in a pair transmitting complementary write signals.
|
申请公布号 |
US6744657(B2) |
申请公布日期 |
2004.06.01 |
申请号 |
US20020245012 |
申请日期 |
2002.09.16 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
AGATA MASASHI |
分类号 |
G11C11/409;G11C5/06;G11C7/10;H01L21/82;H01L21/8242;H01L27/108;(IPC1-7):G11C5/06 |
主分类号 |
G11C11/409 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|