| 摘要 |
PCT No. PCT/DE96/00172 Sec. 371 Date Aug. 5, 1997 Sec. 102(e) Date Aug. 5, 1997 PCT Filed Feb. 1, 1996 PCT Pub. No. WO96/24952 PCT Pub. Date Aug. 15, 1996A process for producing a layered structure in which a silicide layer on a silicon substrate is subjected to local oxidation to cause the boundary layer side of the silicide layer to grow into the silicon substrate. |
