发明名称 |
SEMICONDUCTOR FILM, A METHOD FOR MANUFACTURING THE FILM, A SEMICONDUCTOR DEVICE INCLUDING A THIN FILM TRANSISTOR WHICH USES A CRYSTALLINE SEMICONDUCTOR FILM AS AN ACTIVE REGION BY CRYSTALLIZING A NON-CRYSTALLINE SEMICONDUCTOR FILM, AND A MANUFACTURING METHOD THEREOF |
摘要 |
PURPOSE: A semiconductor film, a method for manufacturing the film, a semiconductor device including a thin film transistor which uses a crystalline semiconductor layer as an active region by crystallizing a non-crystalline semiconductor layer, and a manufacturing method thereof are provided to reduce a residual catalyst on an operating region of a crystalline semiconductor film while preserving crystal structure. CONSTITUTION: A crystalline semiconductor film is formed on an insulating surface. The semiconductor film includes a catalyst element that is capable of promoting crystallization of a semiconductor material of the semiconductor film. The semiconductor film includes at least one region having a plurality of minute holes(107) formed therein. The at least one region of the semiconductor film includes substantially no high-quality semiconductor compound of the catalyst element. The catalyst element is present in a form of solid solution in the crystalline semiconductor film. The semiconductor film is substantially made of Si, the catalyst element is a metal element M, and the high quality semiconductor compound has a composition of MxSiy(x>y). |
申请公布号 |
KR20040041074(A) |
申请公布日期 |
2004.05.13 |
申请号 |
KR20030078792 |
申请日期 |
2003.11.07 |
申请人 |
SHARP CORPORATION |
发明人 |
MAKITA NAOKI;IWAI MICHINORI;MORINO SHINYA;TSUTSUMI TAKAYUKI |
分类号 |
H01L21/20;H01L21/322;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/417;H01L29/786;(IPC1-7):H01L29/786 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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