METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING MULTIPLE PHONON LATTICE ABSORPTION

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to reduce a number of erroneous semiconductor device lattices by using a multiple phonon lattice absorption. CONSTITUTION: A first dopant layer(1) is formed by guiding a first dopant of a first conductive type on a semiconductor substrate. A coherent light(42) is illuminated on the semiconductor device located lower than the first dopant layer. The coherent light has a wavelength enabling a multiple phonon lattice absorption on the semiconductor device. A second dopant layer(5) is formed on a surface of a silicon layer having the first conductive type. The second impurity layer is formed by guiding a second dopant having a second conductive type opposite to the first conductive type. A laser light having a wavelength of 16 through 17 micrometer is illuminated on the silicon layer.