| 摘要 |
The invention includes a memory cell sensing system. The memory cell sensing system includes a plurality of memory cells located on a first plane of an integrated circuit. The system further includes a plurality of sense amplifiers located on a sense plane that is adjacent to the first plane. Each sense amplifier is connectable to at least one memory cell based upon a relative location of each sense amplifier with respect to locations of the at least one memory cell. The invention also includes a method of sensing a state of a selected memory cell within a plurality of memory cells. A plurality of the memory cells are located on a first plane of an integrated circuit. A plurality of sense amplifiers are located on a sense plane that is adjacent to the first plane. The method includes connecting a sense amplifier to at least one memory cell based upon a relative location of each sense amplifier with respect to locations of the at least one memory cell.
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