发明名称 |
Laser irradiation apparatus and method of manufacturing semiconductor device by using the laser irradiation apparatus |
摘要 |
The present invention provides the laser irradiation apparatus that has a galvanometer mirror and an f-theta lens optical system, can offset the change of the energy due to the transmittance change of the f-theta lens, and can scan a laser beam while the change of the energy on a substrate is suppressed. Further, the laser beam energy that is incident on the lens is controlled in advance by combining the optical system changing the branching ratio of polarization of the laser beam and the optical system having dependence on direction of polarization of the laser beam and changed continuously according to the transmittance of the lens on which the laser beam is incident. The laser energy is controlled to offset the transmittance of the lens, and thereby energy fluctuation of the laser beam irradiation of a substrate can be prevented.
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申请公布号 |
US2004074881(A1) |
申请公布日期 |
2004.04.22 |
申请号 |
US20030684416 |
申请日期 |
2003.10.15 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
OISHI HIROTADA |
分类号 |
B23K26/073;B23K26/08;H01L21/20;H01L21/268;H01L21/3213;H01L21/77;H01L21/84;H01L27/12;H01L29/04;H01L29/786;(IPC1-7):B23K26/00 |
主分类号 |
B23K26/073 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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