发明名称 Magnetic memory
摘要 There are provided at least one wire, a magnetoresistive effect element having a storage layer whose magnetization direction varies according to a current magnetic field generated by causing a current to flow in the wire, and first yokes provided so as to be spaced from at least one pair of opposed side faces of the magnetoresistive effect element to form a magnetic circuit in cooperation with the magnetoresistive effect element when a current is caused to flow in the wire. Each of the first yokes has at least two soft magnetic layers which are stacked via a non-magnetic layer.
申请公布号 US2004076035(A1) 申请公布日期 2004.04.22
申请号 US20030662533 申请日期 2003.09.16
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SAITO YOSHIAKI;UEDA TOMOMASA;KISHI TATSUYA;AMANO MINORU
分类号 G11C11/15;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):G11C11/00 主分类号 G11C11/15
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