| 摘要 |
PURPOSE: A single integrated enhancement and depletion mode (p-)HEMT(High Electron Mobility Transistor) device structure and a method for manufacturing the same are provided to be capable of controlling the threshold voltage of an enhancement mode (p-)HEMT by controlling the impurity concentration of a barrier instead of controlling the thickness of the barrier. CONSTITUTION: A single integrated enhancement and depletion mode (p-)HEMT device structure is provided with a semi-insulating compound semiconductor substrate(100), a channel layer(104) formed at the upper portion of the substrate, a dopant doped barrier(106) formed on the channel layer, source/drain ohmic layers(108) spaced apart from each other at the upper portion of the barrier, a source/drain electrode(110) formed on each source/drain ohmic layer, and a gate electrode(112) formed at the exposed portion of the barrier between the source/drain ohmic layers. At this time, the device structure further includes an impurity concentration reduced region(116) formed in the barrier corresponding to the lower portion of the gate electrode by implanting hydrogen ions.
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