METHOD FOR PREVENTING COPPER CONTAMINATION OF VIA OR DUAL DAMASCENE STRUCTURE IN COPPER METALLIZATION PROCESS FOR INTEGRATED CIRCUITS

摘要

PURPOSE: A method for preventing copper contamination of via or dual damascene structure in copper metallization process for integrated circuits is provided to remove defects due to contamination by preventing diffusion of a contaminating material to a dielectric layer. CONSTITUTION: A barrier layer(54) is formed on a bottom surface of an opening of a dielectric which overlies a contaminating material. The barrier layer is partially removed from the bottom surface of the opening to sidewalls of the opening. The bottom surface of the opening is cleaned. During the process for cleaning the bottom surface, the contaminating material is deposited on the sidewalls of the opening. The contaminating material is prevented from diffusing into the dielectric material by the barrier layer material.